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Please use this identifier to cite or link to this item: https://hdl.handle.net/1959.11/4981
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dc.contributor.authorTang, W Xen
dc.contributor.authorJesson, D Een
dc.contributor.authorPavlov, Konstantin Men
dc.contributor.authorMorgan, M Jen
dc.contributor.authorUsher, B Fen
dc.date.accessioned2010-03-10T16:45:00Z-
dc.date.issued2009-
dc.identifier.citationJournal of Physics: Condensed Matter, 21(31), p. 1-5en
dc.identifier.issn1361-648Xen
dc.identifier.issn0953-8984en
dc.identifier.urihttps://hdl.handle.net/1959.11/4981-
dc.description.abstractWe apply Lloyd's mirror photoemission electron microscopy (PEEM) to study the surface shape of Ga droplets on GaAs(001). An unusual rectangular-based droplet shape is identified and the contact angle is determined in situ. It is shown that quenching does not appreciably affect droplet shape and ex situ measurements of the contact angle by atomic force microscopy are in good agreement with Lloyd's mirror PEEM. Extension of Lloyd's mirror technique to reconstruct general three-dimensional (3D) surface shapes and the potential use of synchrotron radiation to improve vertical resolution is discussed.en
dc.languageenen
dc.publisherInstitute of Physics Publishing Ltden
dc.relation.ispartofJournal of Physics: Condensed Matteren
dc.titleGa droplet morphology on GaAs(001) studied by Lloyd's mirror photoemission electron microscopyen
dc.typeJournal Articleen
dc.identifier.doi10.1088/0953-8984/21/31/314022en
dc.subject.keywordsCondensed Matter Characterisation Technique Developmenten
dc.subject.keywordsOptical Physicsen
local.contributor.firstnameW Xen
local.contributor.firstnameD Een
local.contributor.firstnameKonstantin Men
local.contributor.firstnameM Jen
local.contributor.firstnameB Fen
local.subject.for2008020599 Optical Physics not elsewhere classifieden
local.subject.for2008020401 Condensed Matter Characterisation Technique Developmenten
local.subject.seo2008861503 Scientific Instrumentsen
local.profile.schoolSchool of Science and Technologyen
local.profile.emailkpavlov@une.edu.auen
local.output.categoryC1en
local.record.placeauen
local.record.institutionUniversity of New Englanden
local.identifier.epublicationsrecordune-20091002-152054en
local.publisher.placeUnited Kingdomen
local.format.startpage1en
local.format.endpage5en
local.identifier.scopusid70249099208en
local.peerreviewedYesen
local.identifier.volume21en
local.identifier.issue31en
local.contributor.lastnameTangen
local.contributor.lastnameJessonen
local.contributor.lastnamePavloven
local.contributor.lastnameMorganen
local.contributor.lastnameUsheren
dc.identifier.staffune-id:kpavloven
local.profile.orcid0000-0002-1756-4406en
local.profile.roleauthoren
local.profile.roleauthoren
local.profile.roleauthoren
local.profile.roleauthoren
local.profile.roleauthoren
local.identifier.unepublicationidune:5098en
dc.identifier.academiclevelAcademicen
local.title.maintitleGa droplet morphology on GaAs(001) studied by Lloyd's mirror photoemission electron microscopyen
local.output.categorydescriptionC1 Refereed Article in a Scholarly Journalen
local.search.authorTang, W Xen
local.search.authorJesson, D Een
local.search.authorPavlov, Konstantin Men
local.search.authorMorgan, M Jen
local.search.authorUsher, B Fen
local.uneassociationUnknownen
local.identifier.wosid000267880300023en
local.year.published2009en
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