Please use this identifier to cite or link to this item:
https://hdl.handle.net/1959.11/3478
Title: | High-resolution X-ray diffractometry investigation of interface layers in GaN/AlN structures grown on sapphire substrates | Contributor(s): | Mudie, Stephen T (author); Pavlov, Konstantin M (author) ; Morgan, Michael J (author); Tabuchi, Masao (author); Takeda, Yoshikazu (author); Hester, James (author) | Publication Date: | 2003 | DOI: | 10.1142/S0218625X03005001 | Handle Link: | https://hdl.handle.net/1959.11/3478 | Abstract: | GaInN is an important wide band gap material with applications in short wavelength optoelectronic devices. The GaInN layer is often grown on a sapphire substrate, with low-temperature-deposited AlN and thick GaN used as buffer layers. The growth regime consists of many steps, each of which contributes to the overall properties of the device. The aim of our high-resolution X-ray diffraction experiments, conducted at the Photon Factory (Tsukuba, Japan), was to investigate the structural quality of the AlN buffer layer, which affects the final properties of the device. Reciprocal space mapping was used to study samples (having various layer thicknesses) from each stage of the growth process. Analysis of the experimental data provides parameters such as mosaic block dimensions and orientation, lattice strain distribution, and layer thickness. | Publication Type: | Journal Article | Source of Publication: | Surface Review and Letters, 10(2-3), p. 513-517 | Publisher: | World Scientific Publishing Co Pte Ltd | Place of Publication: | Singapore | ISSN: | 1793-6667 0218-625X |
Fields of Research (FoR) 2008: | 110320 Radiology and Organ Imaging 020406 Surfaces and Structural Properties of Condensed Matter |
Socio-Economic Objective (SEO) 2008: | 861502 Medical Instruments 861503 Scientific Instruments |
Peer Reviewed: | Yes | HERDC Category Description: | C1 Refereed Article in a Scholarly Journal |
---|---|
Appears in Collections: | Journal Article |
Files in This Item:
File | Description | Size | Format |
---|
SCOPUSTM
Citations
1
checked on Nov 25, 2023
Page view(s)
940
checked on Mar 7, 2023
Items in Research UNE are protected by copyright, with all rights reserved, unless otherwise indicated.