Electronic Properties of h‐BCN–Blue Phosphorene van der Waals Heterostructures

Title
Electronic Properties of h‐BCN–Blue Phosphorene van der Waals Heterostructures
Publication Date
2018-03-05
Author(s)
Kaewmaraya, Thanayut
Srepusharawoot, Pornjuk
Hussain, Tanveer
( author )
OrcID: https://orcid.org/0000-0003-1973-4584
Email: thussai3@une.edu.au
UNE Id une-id:thussai3
Amornkitbamrung, Vittaya
Type of document
Journal Article
Language
en
Entity Type
Publication
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Place of publication
Germany
DOI
10.1002/cphc.201701150
UNE publication id
une:1959.11/71083
Abstract

Van der Waals heterostructures, a new class of materials made of a vertically selective assembly of various 2D monolayers held together by van der Waals forces, have attracted a great deal of attention due to their promise to deliver novel electronic and optoelectronic properties that are not achievable by using individual 2D crystals. Using density functional theory (DFT), it is revealed that van der Waals heterostructures composed of monolayers of hexagonal boron nitride (h-BN) and the latest P allotrope blue phosphorus (blue phosphorene, BlueP) forms a straddling type I band offset for which the band edges exclusively belong to BlueP. This feature enables h-BN to act as a protective coating material to resolve the air instability of BlueP. Furthermore, substitutional doping of C into h-BN (h-BCN) at a suitable concentration induces h-BCN–BlueP into staggered type II band offset. The type II band alignment triggered by the intensified built-in electric field across the sheets implies improved carrier mobility and the suppressed recombination of photogenerated hole pairs. These major benefits can pave the way for the potential functionality of h-BCN–BlueP to be exploited for efficient photovoltaic devices.

Link
Citation
ChemPhysChem, 19(5), p. 612-618
ISSN
1439-7641
1439-4235
Start page
612
End page
618

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